u(f,b)8bt thru u(f,b)8dt vishay general semiconductor document number: 89086 revision: 06-may-09 for technical questions within your r egion, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com www.vishay.com 1 new product ultrafast rectifier features ? oxide planar chip junction ? ultrafast recovery time ? low switching losses, high efficiency ? high forward surge capability ? meets msl level 1, per j-std-020, lf maximum peak of 245 c (for to-263ab package) ? solder dip 260 c, 40 s (for to-220ac and ito-220ac package) ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec typical applications for use in high frequency rectification and freewheeling application in switching mode converters and inverters for consumer computer, automotive and telecommunicatio n applications. mechanical data case: to-220ac, ito-220ac, to-263ab epoxy meets ul 94 v-0 flammability rating terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 e3 suffix for consumer grade, meets jesd 201 class 1a whisker test polarity: as marked mounting torque: 10 in-lbs maximum primary characteristics i f(av) 8.0 a v rrm 100 v to 200 v i fsm 100 a t rr 20 ns v f at i f = 8 a 0.79 v t j max. 150 c case pin 2 pin 1 to-220ac u8xt ito-220ac uf8xt ub8xt pin 1 pin 2 k heatsink 1 2 1 2 k pin 2 pin 1 to-263ab 1 2 maximum ratings (t c = 25 c unless otherwise noted) parameter symbol u8bt u8ct u8dt unit maximum repetitive peak reverse voltage v rrm 100 150 200 v maximum average forward rectified current (fig. 1) v f(av) 8.0 v peak forward surge current 8.3 ms single half sine-wave superimposed on rated load i fsm 100 a isolation voltage (ito-220ac only) from terminals to heatsink t = 1 min v ac 1500 v operating junction and storage temperature range t j , t stg - 55 to + 150 c
new product u(f,b)8bt thru u(f,b)8dt vishay general semiconductor www.vishay.com for technical questions within your region, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com document number: 89086 revision: 06-may-09 2 notes: (1) pulse test: 300 s pulse width, 1 % duty cycle (2) pulse test: pulse width 40 ms electrical characteristics (t c = 25 c unless otherwise noted) parameter test conditions symbol typ. max. unit instantaneous forward voltage (1) i f = 5 a i f = 8 a i f = 20 a t a = 25 c v f 0.90 0.96 1.12 - 1.02 - v i f = 5 a i f = 8 a i f = 20 a t a = 150 c 0.72 0.79 0.99 - 0.86 - reverse current (2) rated v r t a = 25 c t a = 100 c i r - 200 10 500 a reverse recovery time i f = 0.5 a, i r = 1.0 a, i rr = 0.25 a t rr 15 20 ns reverse recovery time i f = 1.0 a, di/dt = 100 a/s, v r = 30 v, i rr = 0.1 i rm t rr 19 - ns storage charge q rr 7.1 - nc reverse recovery time i f = 8 a, di/dt = 50 a/s, v r = 30 v, i rr = 0.1 i rm t rr 23 - ns storage charge q rr 6.5 - nc typical junction capacitance 4.0 v, 1 mhz c j 25 - pf thermal characteristics (t c = 25 c unless otherwise noted) parameter symbol u8xt uf8xt ub8xt unit typical thermal resistance from junction to case r jc 4.0 5.0 4.0 c/w ordering information (example) package preferred p/n unit weight (g) package code base quantity delivery mode to-220ac u8dt-e3/4w 1.83 4w 50/tube tube ito-220ac uf8dt-e3/4w 1.69 4w 50/tube tube to-263ab ub8dt-e3/4w 1.37 4w 50/tube tube to-263ab ub8dt-e3/8w 1.37 8w 800/reel tape and reel
new product u(f,b)8bt thru u(f,b)8dt vishay general semiconductor document number: 89086 revision: 06-may-09 for technical questions within your r egion, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com www.vishay.com 3 ratings and characteristics curves (t a = 25 c unless otherwise noted) figure 1. maximum forward current derating curve figure 2. forward power loss characteristics figure 3. typical instantaneous forward charateristics 0 6 8 10 12 75 50 25 0 100 125 150 175 a v erage for w ard rectified c u rrent (a) am b ient temperat u re (c) 4 2 resisti v eorind u cti v e load u 8 and ub 8 uf 8 0 1 2 3 4 5 6 7 8 9 0246 910 a v erage for w ard c u rrent (a) a v erage po w er loss ( w ) d = 0.1 d = 0.2 d = 0.3 d = 0.5 d = 0. 8 d = 1.0 d = t p /t t p t 1357 8 10 1 0.1 0.1 0.3 0.5 0.7 0.9 t a = 150 c t a = 125 c t a = 25 c instantaneo u s for w ard v oltage ( v ) instantaneo u s for w ard c u rrent (a) 0.2 0.4 0.6 0. 8 0.01 t a = 100 c figure 4. typical reverse leakage charateristics figure 5. typical junction capacitance t a = 150 c t a = 125 c t a = 25 c 10 000 1000 100 10 10 20 30 40 50 60 70 8 0 90 100 1 percent of rated peak re v erse v oltage ( % ) instantaneo u s re v erse c u rrent ( a) 0.1 t a = 100 c re v erse v oltage ( v ) j u nction capacitance (pf) 0.1 10 1 100 100 10 1 t j = 25 c f = 1.0 mhz v sig = 50 m v p-p
new product u(f,b)8bt thru u(f,b)8dt vishay general semiconductor www.vishay.com for technical questions within your region, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com document number: 89086 revision: 06-may-09 4 package outline dimensions in inches (millimeters) to-220ac case pi n 2 pi n 1 0.635 (16.13) 0.625 (15. 8 7) 0.415 (10.54) max. 0.154 (3.91) dia. 0.14 8 (3.74) dia. 0.113 (2. 8 7) 0.103 (2.62) 0.370 (9.40) 0.360 (9.14) pi n 12 0.160 (4.06) 0.140 (3.56) 0.057 (1.45) 0.045 (1.14) 0.105 (2.67) 0.095 (2.41) 0.037 (0.94) 0.027 (0.6 8 ) 0.205 (5.20) 0.195 (4.95) 0.022 (0.56) 0.014 (0.36) 1.14 8 (29.16) 1.11 8 (2 8 .40) 0.560 (14.22) 0.530 (13.46) 0.110 (2.79) 0.100 (2.54) 0.350 ( 8 . 8 9) 0.330 ( 8 .3 8 ) 0.145 (3.6 8 ) 0.135 (3.43) 0.603 (15.32) 0.573 (14.55) 0.055 (1.39) 0.045 (1.14) 0.1 8 5 (4.70) 0.175 (4.44) ito-220ac pi n 1 2 0.025 (0.64) 0.015 (0.3 8 ) 0.404 (10.26) 0.3 8 4 (9.75) 0.076 (1.93) ref. 0.076 (1.93) ref. 45 ref. 0.600 (15.24) 0.5 8 0 (14.73) 0.560 (14.22) 0.530 (13.46) 0.035 (0. 8 9) 0.025 (0.64) 0.205 (5.21) 0.195 (4.95) 0.191 (4. 8 5) 0.171 (4.35) 0.057 (1.45) 0.045 (1.14) 0.671 (17.04) 0.651 (16.54) 0.02 8 (0.71) 0.020 (0.51) 0.110 (2.79) 0.100 (2.54) 7 ref. 7 ref. 7 ref. 0.350 ( 8 . 8 9) 0.330 ( 8 .3 8 ) 0.140 (3.56) dia. 0.125 (3.17) dia. 0.135 (3.43) dia. 0.122 (3.0 8 ) dia. 0.110 (2.79) 0.100 (2.54) 0.190 (4. 8 3) 0.170 (4.32) to-263ab mountin g pad layout 0.670 (17.02) 0.591 (15.00) 0.105 (2.67) 0.095 (2.41) 0.0 8 (2.032) mi n . 0.15 (3. 8 1) mi n . 0.33 ( 8 .3 8 ) mi n . 0.42 (10.66) mi n . 12 k k 0.140 (3.56) 0.110 (2.79) 0.021 (0.53) 0.014 (0.36) 0.110 (2.79) 0.090 (2.29) 0 to 0.01 (0 to 0.254) 0.055 (1.40) 0.047 (1.19) 0.055 (1.40) 0.045 (1.14) 0.190 (4. 8 3) 0.160 (4.06) 0.205 (5.20) 0.195 (4.95) 0.624 (15. 8 5) 0.591 (15.00) 0.037 (0.940) 0.027 (0.6 8 6) 0.105 (2.67) 0.095 (2.41) 0.360 (9.14) 0.320 ( 8 .13) 0.411 (10.45) 0.3 8 0 (9.65) 0.245 (6.22) mi n .
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